microsemi 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 page 1 copyright ? 2003 rev. 1.0 www. microsemi . com LX3050/52 12.5gbps coplanar ingaas/inp pin photo diode p roduction d ata s heet integrated products description microsemi?s ingaas/inp pin photo diode chips are ideal for high bandwidth 1310nm and 1550nm optical networking applications. the device series offer high responsivity, low dark current, and high bandwidth for high performance and low sensitivity receiver design. the lx305x series of coplanar waveguide photo diodes are currently offered in die form allowing manufacturers the versatility of custom assembly configurations including traditional wirebond or flip chip assembly this device is ideal for manufacturers of optical receivers, transceivers, transponders, optical transmission modules and combination pin photo diode ? transimpedance amplifier. key features ? LX3050 single die ? lx3052, 1x4 array die ? coplanar waveguide , 50ohm ? high responsivity ? low dark current ? high bandwidth ? anode/cathode on illuminated side ? 125 m pad pitch ? die good for wire bond or flip-chip ? die good for non-hermetic package applications ? 1310nm catv optical applications ? 1550nm dwdm optical applications ? sonet/sdh, atm ? 10 gigabit ethernet, fibre channel ? 1310nm vcsel receivers benefits ? large wirebond contact pads ? low contact resistance ? wire bond or flip chip applications ? ground- signal-ground pad configuration for standard rf test probes product highlight ? coplanar design (gnd-signal-gnd) 50 ohm characteristic impedance ? 125 um standard pad pitch for ease of test ? large 75um x 75um pad size for ease of packaging ? wire bond or flip chip capability LX3050 lx3052 l l x x 3 3 0 0 5 5 0 0 / / 5 5 2 2
microsemi 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 page 2 copyright ? 2003 rev. 1.0 www. microsemi . com LX3050/52 12.5gbps coplanar ingaas/inp pin photo diode p roduction d ata s heet integrated products characteristics test conditions (unle ss otherwise noted): t a = 25 o c, v r = 5 volts LX3050/52 parameter symbol test conditions min typ max units ` maximum ratings operating junction temperature range t j -20 +85 o c storage temperature range t stg -55 +125 o c maximum soldering temperature 10 seconds maximum at temperature +260 o c ` electrical characteristics active area diameter 32 m responsivity (1) r v r = 5v, = 1550nm v r = 5v, = 1310nm 0.90 0.85 1.0 0.95 a/w dark current i d v r = 5v 0.2 5 na breakdown voltage bv r i r = 10 a 30 45 volts capacitance c v r = 5v 0.12 0.135 0.15 pf bandwidth (2) bw v r = 5v, = 1550nm @-3db 13 15 ghz cross-talk s 21 1x4 array only @ 10 ghz -35 db note: 1. antireflective coating is ? wavelength at 1430nm covering 1310 and 1550nm applications 2. bandwidth is measured at ?3db electrical power (photocurrent drops to 71% of dc value) into a 50 ohm load e e l l e e c c t t r r i i c c a a l l s s
microsemi 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 page 3 copyright ? 2003 rev. 1.0 www. microsemi . com LX3050/52 12.5gbps coplanar ingaas/inp pin photo diode p roduction d ata s heet integrated products die geometry part number active area ,a, m die dimension, m pad dimension, m pad pitch, p, m die thickness, m y x w v LX3050 32 450 450 75 75 125 152 lx3052 32 450 1200 75 75 125 152 important: for the most current data, consult microsemi ?s website: http://www.microsemi.com m m e e c c h h a a n n i i c c a a l l s s
microsemi 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 page 4 copyright ? 2003 rev. 1.0 www. microsemi . com LX3050/52 12.5gbps coplanar ingaas/inp pin photo diode p roduction d ata s heet integrated products characteristic curves LX3050 bw (vr = 1-5v, 1550 nm) 5 6 7 8 9 0.0e+00 5.0e+09 1.0e+10 1.5e+10 2.0e+10 frequency (hz) relative s21(db) vr=-5v, bw=15.8ghz vr=-4v,bw=15.5ghz vr=-3v, bw=15.0ghz vr=-2.4v, bw=14.0ghz vr=-2v, bw=13.5 ghz vr=-1v, bw =10.6ghz LX3050, c-v 0.00 0.05 0.10 0.15 0.20 0.25 0246810 vr(v) c(pf) rf cross talk, lx3052 -100 -80 -60 -40 -20 0 0.0e+00 5.0e+09 1.0e+10 1.5e+10 2.0e+10 frequency (hz) rf cross-talk (db) LX3050 id@5v over temperature 0.1 1 10 100 -40 -20 0 20 40 60 80 100 120 temp (oc) id@5v (na) min id@5v (na) mean id@5v (na) max id@5v (na) LX3050 bv over temperature 0 10 20 30 40 50 60 -40 -20 0 20 40 60 80 100 120 temp (oc) bv (v) min bv (v) mean bv (v) max bv (v) g g r r a a p p h h s s
microsemi 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 page 5 copyright ? 2003 rev. 1.0 www. microsemi . com LX3050/52 12.5gbps coplanar ingaas/inp pin photo diode p roduction d ata s heet integrated products circuit model r diode c diode c shunt r ser l ser part # rser (ohm) lser (nh) cshunt (pf) cdiode (pf) rdiode (mohm) LX3050 17 0.012 0.035 0.10 25 precautions for use esd protection is important. standard esd protection procedures should be employed whenever handling ingaas pin photo diode. c c i i r r c c u u i i t t m m o o d d e e l l
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